Electromigration Test / Stress Migration

• Measurement of rate of electromigration degradation across a temperature range for different types of metal lines.
• Capabilities-
  Current/DUT : 0.04mA to 300mA
  Voltage : 3.7V compliance per DUT
  Temperature : 60ºC to 350ºC
  Time : 1 measurement/second/DUT
  Capacity : Total capacity of 768 DUTs over 4 furnaces
• Electromigration tests structures qualification per FSA Standards and meet the requirements of major industry standards.

Time Dependent Dielectric Breakdown

• Structures will be provided for both long term constant voltage testing for the requirement of the FSA proposed qualification standard and for faster WLR and PLR tests for process monitoring.
• Capabilities:
  Current/DUT : 2mA
  Voltage : ±25V or 0-50V stress voltage per DUT
  Temperature : 60ºC to 250ºC
  Time : 2 measurement/second/DUT
  Capacity : 480 DUTs over 4 furnaces
• Time-dependent-dielectric-breakdown test structures qualification per FSA Standards and meet the requirements of major industry standards.

Hot Carrier / Vt Stability Test

• Hot carrier degradation rates will be measured for N and P channel devices, thick and thin oxides by using arrays of transistors.
• These arrays will reduce the total number of probe pads required to perform these test and will allow fast wafer level measurement techniques with multisite probe cards as well as traditional packaged measurement techniques.
• Capabilities:
  Current/DUT : 15mA
  Voltage : ±10V stress voltage per DUT
  Temperature : -30ºC to 195ºC
  Capacity : Total capacity of 96 DUTs
• Hot carrier test structures qualification per FSA Standards and meet the requirements of major industry standards.