The Electromigration test structure is used to monitor the self diffusion of aluminum in a preferred direction due to momentum transfer from electrons flowing in a metal line.

Time Dependent Dielectric Breakdown . Three different test structures are used to detect defects in capacitors or gate oxides made of thin layers of SiO 2 , which are subjected to time dependent dielectric breakdown.

Fast Hot Carrier - The rate of hot carrier trapping can be examined using a test transistor with the drain enclosed by the gate. This test is performed by forcing the drain-to-substrate diode to avalanche breakdown.